GPTJ2060 phase controlled scr high reliability operation dc power supply ac drives voltage up to 1600 v average current 600 a surge current 8 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 1600 v v rsm non-repetitive peak reverse voltage 1700 v v drm repetitive peak off-state voltage 1600 v i drm repetitive peak off-state current, max. v drm , single phase, half wave, tj = tjmax 30 ma i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 30 ma on-state characteristics i t(av) average on-state current sine wave,180 conduction, th = 55 c 600 a i t(rms) r.m.s. on-state current sine wave,180 conduction, th = 55 c 942 a i tsm surge on-state current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 8 ka i2t i2 t for fusing coordination 320 ka2s v t(to) threshold voltage t j = t jmax 0,96 v r t on-state slope resistance t j = t jmax 0,46 m w v tm peak on-state voltage, max on-state current i t = 1260 a , tj = 25 c 1,53 v i h holding current, max t j = 25 c 150 ma i l latching current, typ t j = 25 c 300 ma triggering characteristics v gt gate trigger voltage tj = 25 c, vd = 12 v 3 v i gt gate trigger current tj = 25 c, vd = 12 v 300 ma v gd non-trigger voltage vd = 67% vrrm, tj = tjmax 0,25 v p gm peak gate power dissipation pulse width 0.5 ms 100 w p g(av) average gate power dissipation 5 w i fgm peak gate current 20 a v fgm peak gate voltage (forward) 10 v v rgm peak gate voltage (reverse) 3 v switching characteristics di/dt critical rate of rise of on-state current t j = t jmax 200 a/s dv/dt critical rate of rise of off-state voltage t j = t jmax 1000 v/s t q turn-off time, typ t j = t jmax , i t = 400 a, di/dt = -12.5 a/s 200 s v r = 100 v, dv/dt = 20 v/s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0,056 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0,015 c/w t jmax max operating junction temperature 125 c t stg storage temperature -40 / 125 c f clamping force 10% 7 kn mass 180 g document GPTJ2060t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 1307 fax: +39-010-667 2459 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
phase controlled scr GPTJ2060 document GPTJ2060t001 maximum surge current d.s. cooled 0 1 2 3 4 5 6 7 8 9 1 10 100 number of cycle current pulses [n] i tsm [a] on-state voltage drop 0 200 400 600 800 1000 1200 1400 0 0,5 1 1,5 2 v t [v] i t [a] t j =t jmax green power semiconductors thermal impedance (j-c) 0 0,01 0,02 0,03 0,04 0,05 0,06 0,001 0,01 0,1 1 10 100 time [s] z th(j-c) [c / w] current rating - sine wave 50 60 70 80 90 100 110 120 130 0 200 400 600 i t [a] heatsink temperature [c] 180 90 120 60 30 power loss - sine wave 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 i t [a] p f [w] 180 120 90 60 30 i n the interest of product improvement green power semiconductors reserves the right to change any specification given in this data sheet without notice. on-state voltage drop 0 200 400 600 800 1000 1200 1400 0 0,5 1 1,5 2 v t [v] i t [a] t j =t jmax
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